Devices using a ceramic piezoelectric

ABSTRACT

An electromechanical vice includes a support structure, a component moveable with respect to the support structure, and a piezoelectric device mechanically coupled to both the support structure and the component. The piezoelectric device includes a polycrystalline body and electrodes located on the body. The body has a composition with a stoichiometry described by [Pb(Mg 1/3 Nb 2/3 )O 3 ] (1−x)  [PbTiO 3 ] x . The value of x is in the range of about 0.31 to about 0.47.

This is a continuation of application Ser. No. 09/798,707 filed on Mar. 2, 2001, now U.S. Pat. No. 6,517,737.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to piezoelectric materials and devices that use piezoelectric materials.

2. Discussion of the Related Art

Piezoelectric materials respond to applied electric fields by physically deforming. The magnitude of the deformations that electric fields generate in single-crystal perovskites such as Pb(Mg_(1/3)Nb_(2/3))O₃—PbTiO₃ (PMN-PT) and Pb(Zn_(1/3)Nb_(2/3))O₃—PbTiO₃ (PZN-PT) are an order of magnitude larger than those that the fields generate in polycrystalline piezoelectrics such as PbZrO₃—PbTiO₃ (PZT). The size of their piezoelectric responses make the crystalline perovskites promising materials for new piezoelectric devices.

Unfortunately, the fabrication of crystalline perovskites is complicated and expensive. On the one hand, high fabrication costs make the crystalline perovskites too expensive for use in many types of electromechanical devices. On the other hand, polycrystalline PZN-PT typically require high-pressure synthesis, which is prohibitively expensive to some commercial applications of PZN-PT.

Herein, PMN refers to Pb(Mg_(1/3)Nb_(2/3))O₃ and PT refers to PbTiO₃.

Herein, chemical symbols are used for lead (Pb), niobium (Nb), zinc (Zn), zirconium (Zr), magnesium (Mg), titanium (Ti), and oxygen (O).

SUMMARY OF THE INVENTION

In one aspect, the invention features an electromechanical device. The electromechanical device includes a support structure, a component moveable with respect to the support structure, and a piezoelectric device mechanically coupled to both the support structure and the component. The piezoelectric device includes a polycrystalline body and electrodes located on the body. The body has a composition with a stoichiometry described by [Pb(Mg_(1/3)Nb_(2/3))O₃]_((1−x)) [PbTiO₃]_(x). The value of x is in the range of about 0.31 to about 0.47.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows x-ray diffraction patterns of ceramic compositions with the stoichiometry (PMN)_((1−x)) (PT)_(x);

FIG. 2 shows the piezoelectric responses of the compositions of FIG. 1;

FIG. 3 is a cross-sectional view of a slab-shaped piezoelectric device;

FIG. 4 is a flow chart showing a process for fabricating the piezoelectric device of FIG. 3;

FIG. 5 is an oblique view of an inkjet print head that uses the piezoelectric device of FIG. 3;

FIG. 6 is an oblique view of a micro-electro-mechanical (MEM) device that uses the piezoelectric device of FIG. 3; and

FIG. 7 is a cross-sectional view of a pressure gage that uses the piezoelectric device of FIG. 3.

DETAILED DESCRIPTION

Various embodiments include polycrystalline compositions of Pb(Mg_(1/3)Nb_(2/3))O₃ and PbTiO₃. These polycrystalline compositions are stoichiometrically described by PMN_((1−x)) PT_(x). The compositions have piezoelectric responses to applied electric fields. The magnitudes of the piezoelectric responses depend on the values of “x” defining the stoichiometries of the compositions. The values of “x” also define the crystalline structures of the compositions. Heightened piezoelectric responses occur for x's corresponding to tetragonal polycrystalline structures located near the morphotropic phase boundary (MPB).

FIG. 1 shows x-ray diffraction spectra 11, 12 of polycrystalline bodies with stoichiometries described by (PMN)_((1−x)) (PT)_(x). The spectra 11, 12 depend on x-ray scattering angle θ and the stoichiometric parameter “x”. The value of “x” that corresponds to the MPB is identifiable from x-ray diffraction spectra 11, 12. For values of “x” on one side of the MPB, a split peak 14 exists in the x-ray pattern 11. The split peak 14 indicates the presence of tetragonal domains in the polycrystalline composition. For values of “x” on the other side of the MPB, the corresponding peak 15 in the x-ray pattern 12 is no longer split. The presence of the non-split peak 15 indicates a rhombohedral phase.

FIG. 2 shows piezoelectric responses of various polycrystalline compositions whose stoichiometries are described by (PMN)_((1−x)) (PT)_(x). The piezoelectric responses of the compositions are measured by values of a coefficient d₃₃ defined by d₃₃=dP₃/dE₃. The coefficient d₃₃ defines the polarization P₃ produced along the direction of the applied electric field E₃. The value of d₃₃ depends on the number “x” , which defines a composition's stoichiometry.

The compositions of (PMN)_((1−x)) (PT)_(x) exhibit a peak 16 in coefficient d₃₃ near the morphotropic boundary (MPB) that separates different grain structures for the polycrystalline compositions. The MPB corresponds to a value of x in the range of about 0.33 to about 0.34. The maximum 17 of the peak 16 in the value of d₃₃ occurs for an “x” equal to about 0.35.

For values of x greater than about 0.32 and smaller than about 0.4, polycrystalline compositions of (PMN )_((1−x)) (PT)_(x), have larger coefficients d₃₃ than conventional polycrystalline ceramics of PZT, shown as PZT-A and PZT-B. In the range of “x≧0.35”, the compositions of (PMN)_((1−x)) (PT)_(x) have tetragonal crystalline domain structures.

The unit cell of a tetragonal crystal is a parallelepiped in which one side has a different length than the other two sides. The side with the different length has different orientations in different crystalline domains. In such compositions, a piezoelectric response, in addition to the intrinsic contribution, is produced through realigning the various crystalline domains of the composition along the applied electric-field direction. For compositions near the MPB, individual tetragonal crystalline domains are more easily realigned by a poling operation than for compositions whose value of “x” places them farther away from the MPB. The poling operation includes applying an electric field to a composition.

For values of “x” greater than or equal to about 0.35, compositions of (PMN)_((1−x)) (PT)_(x) have tetragonal polycrystalline structures. For values of “x” greater than about 0.32 and less than about 0.47, these compositions have larger coefficients d₃₃, i.e., larger piezoelectric responses, than polycrystalline compositions based on BaTiO₃ or PbTiO₃.

FIG. 3 shows a piezoelectric device 20 that includes a slab-shaped solid body 22 and gold electrodes 25, 26 located on opposite sides of the slab-shaped body 22. The solid body 22 has a polycrystalline structure and a stoichiometric composition (PMN)_((1−x)) (PT)_(x). The number “x” has a value greater than about 0.31 and smaller than about 0.47, and in preferred embodiments, “x” is greater than about 0.32 and less than about 0.40. The polycrystalline structure is formed by crystalline grains 23, 24 with different orientations and diameters smaller than about 10 microns. The solid body 22 has a piezoelectric response to applied electric fields.

In some embodiments, solid body 22 also includes a dopants that make up not more 2 percent of the weight of the solid body 22. The presence of the dopants may increase the piezoelectric response of the solid body 22 as compared to an undoped body of the otherwise same composition. Exemplary dopants include lanthanum, cobalt, cobalt plus lanthanum, thorium, rhodium, and iridium. Combinations such as thorium plus iridium, indium plus manganese, sodium plus gallium, indium plus gallium, gallium plus iron, cobalt plus tantalum, and cobalt plus tungsten may also be used to dope solid body 22.

The gold electrodes 25, 26 are used to apply a voltage across the width of the solid body 22.

The solid body 22 has a permanent anisotropic axis “P” of maximal dielectric response. The axis “P” is perpendicular to the surfaces of electrodes 25, 26. The piezoelectric response of the body 22 corresponds to a coefficient d₃₃ with a value greater than about 500 pico-coulombs per Newton (pC/N). In exemplary solid bodies 22, the coefficient d₃₃ has a value of about 610 pC/N or larger.

FIG. 4 is a flow chart for a process 30 for fabricating a piezoelectric device 20 of FIG. 3. Fabrication process 30 includes forming a sintering mixture of powdered MgNb₂O₆, powdered TiO₂, and powdered PbO (step 32). In the sintering mixture, proportions are selected to produce a desired stoichiometric composition of solid body 22 after sintering. Multiple sinterings are performed on the mixture of oxide powders to produce polycrystalline solid body 22 in a selected shape (step 34). To compensate for evaporation of lead at the sintering temperatures, the mixture includes an additional amount of PbO powder. Performing high-temperature sintering steps in a closed container reduces vaporization of lead.

The sintering produces a solid body 22 that is described by a stoichiometric formula (PMN)_((1−x)) (PT)_(x). The stoichiometric parameter “x” is greater than or equal to about 0.31 and smaller than or equal to about 0.47. For better piezoelectric responses, some exemplary fabrication processes form the solid body with a composition in which x is greater than about 0.32 and less than about 0.40.

After the sintering, metallic electrodes 25, 26 are formed on opposite surfaces of the solid body 22 to produce an electromechanical device (step 36). The electrodes 25, 26 are used to pole the solid body 22 with a strong electric field (step 38). The poling generates a permanent anisotropic polarizability along a direction perpendicular to the electrodes 25, 26 by permanently realigning crystalline domains in the solid body 22.

An exemplary embodiment of the fabrication process 30 of FIG. 4 is described below.

To perform the exemplary embodiment, powdered MgNb₂O₆ is made. To make the powdered MgNb₂O₆, powdered MgO is dried and combined with powdered Nb₂O₅ to form a mixture with equal molar amounts of MgO and Nb₂O₅. Then, the mixture is sintered via a multi-step process to produce the MgNb₂O₆. The sintering process includes heating the mixture at a temperature of about 1100° C. for about 12 hours, grinding the mixture to a powder, and reheating the ground mixture at a higher temperature of about 1200° C. for about 24 hours. After the multi-step sintering, the produced solid is reground to produce the powdered MgNb₂O₆.

In the exemplary embodiment, powdered MgNb₂O₆, powdered PbO, and powdered TiO₂ are combined to form a mixture in which stoichiometry proportions are chosen to produce a desired composition for solid body 22 after sintering. To produce a (PMN)_((1−x)) (PT)_(x) composition, the stoichiometric proportions of MgNb₂O₆, TiO₂, and PbO are selected to be equal to (1−x)/3, x, and (1+ε). The number “ε” is an excess of PbO that is introduced into the mixture to compensate for Pb evaporation during subsequent sintering.

In the exemplary embodiment, a multi-step process that sinters the mixture of MgNb₂O₆, TiO₂, and PbO to produce solid body 22. The multi-step process includes a first sintering of the mixture at about 900° C. for about 12 hours. The multi-step process includes a second sintering of the mixture at about 950° C. for about 12 more hours. The multi-step process includes a third sintering of the mixture at about 1200° C. to about 1250° C. for about 5 hours. The third sintering step is carried out in closed alumina crucibles to reduce Pb evaporation during this high-temperature sintering step and to enable better control on the final composition of the piezoelectric material. The second and third sinterings are performed at temperatures that would otherwise cause evaporation loss of Pb and thus, a lower molar percentage of Pb in the sintered solid body 22.

Even with a crucible that is cemented closed some evaporation of Pb occurs. To compensate for this evaporation of lead during sintering, the sintering mixture includes a stoichiometric excess “ε” of PbO. For the exemplary embodiment, the value of the excess ε is equal to about 0.05.

In the exemplary embodiment, electrodes 25, 26 are attached to the solid body 22 by performing a sputtering deposition of gold on opposite sides of the sintered body 22.

In the exemplary embodiment, electrodes 25, 26 are used to pole solid body 22 so that a permanent electric polarizability is produced along a direction perpendicular to the surfaces of electrodes 25, 26. The poling is done by maintaining the solid body 22 at a temperature of about 130° C. while applying a strong electric field across the electrodes 25, 26. The poling electric field has an intensity of about 7 to about 10 kilo-volts (kV) per centimeter (cm) and is applied across the electrodes 25, 26 for about 30 minutes. At the elevated poling temperature, the electric field causes crystalline domains in the solid body 22 to partially realign along the poling direction. After cooling the poled body 22 to room temperature, a permanent anisotropic polarizability remains.

Referring again to FIG. 3, the piezoelectric device 20 is used as a functional component of a variety of electromechanical devices. Some of these electromechanical devices are described below.

FIG. 5 shows a portion of an inkjet print head 50 that includes an array of ink jets 51, 51′ located on a support structure 49. The ink jets 51, 51′ include piezoelectric devices 52, 52′ that have constructions analogous to that of device 20 of FIG. 3. The ink jets 51, 51′ include ink reservoirs 53, 53′ with ink nozzles 54, 54′. The ink reservoirs 53, 53′ have flexible back surfaces adjacent to the piezoelectric devices 52, 52′. Movements of the piezoelectric devices 52, 52′ operate the ink jets 51, 51′ by deforming the ink reservoirs 53, 53′ and causing droplets of ink 55, 55′ to be squirted from nozzles 54, 54′ towards target spots on a sheet 56 of paper. The piezoelectric devices 52, 52′ are controlled by external voltage sources (not shown).

FIG. 6 shows a micro-electro-mechanical (MEM) device 60. The MEM device 60 includes a supporting substrate 61, a flexible structure 62 connected to the substrate 61, and a piezoelectric device 63 having a construction analogous to that of device 20 of FIG. 3. The piezoelectric device 63 rests on the substrate 61 and mechanically couples to the flexible structure 62. The piezoelectric device 63 deforms in response to voltages applied to electrodes 65, 66 and functions as an actuator of the structure 62. The deformations of the piezoelectric device 63 cause the structure 62 to bend thereby changing the orientation of mirror surface 67 located thereon.

FIG. 7 is a cross-sectional view of a pressure gage 70 that includes a moving sensor element 71 and a piezoelectric device 72 located on a support structure 74, e.g., the piezoelectric device 20 of FIG. 3. The mechanical element 71 moves vertically in response to pressure changes in chamber 73. Vertical movements of the mechanical element 71 cause deformations of the piezoelectric device 72. The deformations produce a voltage across electrodes 75, 76. The voltage is measured by a voltmeter 78 to determine the pressure in the chamber 73.

From the disclosure, drawings, and claims, other embodiments of the invention will be apparent to those skilled in the art. 

What is claimed is:
 1. An electromechanical device, comprising: a support structure; a component that is able to move with respect to the support structure; and a piezoelectric device mechanically coupled to both the support structure and the component, the piezoelectric device having a polycrystalline body and electrodes located on the body, the body being a piezoelectric material and having a composition whose stoichiometry is described by [Pb(Mg_(1/3)Nb_(2/3))O₃]_((1−x)) [PbTiO₃]_(x), the value of x being in a range of about 0.31 to about 0.47.
 2. The device of claim 1, wherein the component is positioned to apply a pressure to the polycrystalline body in response to an external pressure.
 3. The device of claim 1, wherein the piezoelectric device is positioned to cause a motion by the component in response to a voltage applied across the electrodes.
 4. The device of claim 3, component includes a portion of an ink jet.
 5. The device of claim 1, wherein the value of x is greater than or equal to about 0.32 and less than or equal to about 0.40.
 6. The device of claim 5, wherein the body comprises tetragonal crystalline domains. 